Abstract
It is found that single-electron current oscillations in the drain-gate characteristics of a single-electron transistor fabricated by the step-edge cutoff process, as compared to a conventional single-electron transistor, are damped several times slower and do not change their phase by π as the source-drain voltage increases. This is explained by the strong nonlinearity of the current-voltage characteristics of tunnel junctions, which is caused by the inelastic character of tunneling.
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