Abstract
Correspondence: On the nature of strong piezoelectricity in graphene on SiO2.
Highlights
In a recent article published in Nature Communications, da Cunha Rodrigues et al.[1] used both methods to investigate single-layer graphene deposited on SiO2 grating substrates
Raman shifts into strain values, the authors assume that the strain is of uniaxial nature and use a Gruneisen parameter of DoG/De 1⁄4 À 49.3 cm À 1 1⁄4 À 0.493 cm À 1/%
The extracted strain values are reduced by a further factor of 3 if one uses a Gruneisen parameter of À 69.1 cm À 1/%, as previously measured for biaxial strain[5], which would result in an in-plane strain of 0.02–0.03% only
Summary
In a recent article published in Nature Communications, da Cunha Rodrigues et al.[1] used both methods to investigate single-layer graphene deposited on SiO2 grating substrates. Raman shifts into strain values, the authors assume that the strain is of uniaxial nature and use a Gruneisen parameter of DoG/De 1⁄4 À 49.3 cm À 1 1⁄4 À 0.493 cm À 1/% (see page 6 in Supplementary Note 1 of da Cunha Rodrigues et al.[1]). By using the correct units, this leads to strain values which are exactly a factor 100 smaller than what has been claimed by the authors.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
