Abstract
Sputtered tantalum oxide films usually exhibit very high dc leakage currents and are not suitable for making thin‐film capacitors. In this paper, a process is described in which rf‐sputtered tantalum oxide films have low dc leakage currents approaching those of liquid‐phase‐anodized films. The conduction characteristics of the sputtered films can be described by a modified Simmons type model. The sputtering parameters which control the conduction characteristics of these films are discussed.
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