Abstract
We have fabricated needle-shaped silicon nitride (Si3N4) nanowires (NWs) on p-type Si substrate by chemical vapour deposition reactor using Si powder and (H2 and NH3) as precursor gases. The NWs were characterized by fourier transform infrared (FTIR) spectroscopy, photoluminescence (PL) spectroscopy and X-ray photoelectron spectroscopy (XPS) in order to investigate structural and electronic properties. The vibrational signature at 467, 799 and 1085 cm−1 confirmed the Si–N stretching vibration bands. The qualitative of Si3N4-NWs network were analysed by curve fitting of FTIR signature. The room temperature photoluminescence spectra of Si3N4-NWs reveals several emission bands centred at 3.219, 3.265, 3.319, 3.373, 3.432, 3.504, 3.577 and 3.631 eV, which are associated with electronic transitions between the conduction band and defect states. The valence band of appeared p, sp, sp2, sp3 and 2s orbitals at 3.36, 6.42, 8.11, 9.73 and 12.36 eV respectively and shifted to higher binding energy with increasing of ammonia flow rate.
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