Abstract
The layer strain and its relaxation effects on the photoluminescence (PL) of InGaN layers are studied using confocal microscopy. The relaxation imposed structural changes are studied by X-ray diffraction (XRD) reciprocal space mapping and atomic force microscopy. Initial layer relaxation generated misfit dislocations were observed by confocal microscopy as intersecting parallel lines of lower PL intensity. The splitting of the PL spectrum into several PL bands indicated an onset of changes in the layer structure, which were confirmed by XRD measurements. The PL bands were attributed to two sub-layers of the sample: A relaxed upper sub-layer and a strained sub-layer underneath. Bright spots, approximately 250 nm in diameter, were observed on the background of the inhomogeneous PL intensity distribution due to fluctuations of In content. The bright spots correspond to column-like structures with relaxed lattice, In content as in the initial strained layer, and lower density of nonradiative recombination centers than that in the surrounding background.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
