Abstract
The correlation between the spatially resolved carrier lifetime of multicrystalline silicon and the spatially resolved monochromatic solar cell efficiency is investigated by means of microwave-detected photoconductance decay (MW-PCD) measurements and illuminated lock-in thermography (ILIT). Local monochromatic solar cell efficiencies are determined from ILIT measurements under short-circuit conditions and at the maximum power point of the cell. The resulting efficiency images are compared with efficiency images obtained from MW-PCD lifetime images of unprocessed neighbouring wafers using PC1D simulations. We observe a qualitative correlation between the measured and the simulated efficiency images. Areas with reduced efficiency are found in the same locations using both methods. However, the dynamic range in the monochromatic efficiency is larger for the images obtained from ILIT measurements. Possible explanations for this difference are a change in carrier lifetime during cell processing and varying lifetimes on microscopic scales, leading to averaging faults in the lifetime images.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
