Abstract
Atom probe tomography (APT) was used to quantify inhomogeneities in the distribution of Mn and Co in doped epitaxial Ge thin films for which X-ray diffraction (XRD) studies indicate single phase material. The segregation of dopants into Co and Mn-rich regions with characteristic sizes was evident upon visual inspection of the APT reconstruction and a frequency distribution analysis of the concentration of Co, Mn, and Ge atoms verified that the composition fluctuations exceeded those of a random alloy. Isoconcentration surfaces were generated to establish the connectedness of regions enriched in Mn that have been proposed to enhance the Curie temperature in dilute magnetic semiconductors. The analysis demonstrates important contributions that APT can make to the understanding of magnetism in these materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
