Abstract
The process of fabricating Cu layers by displacement reaction is demonstrated. SiC was used and displaced in the chemical reaction to form copper films. SiC was also adopted to improve the adhesion between the copper and the dielectric layer. The effects of the process recipe on the structure and reliability of the Cu lines were studied. The obtained average electrical resistivity of the Cu films was 2.04 -cm after thermal annealing and it was 3.22 -cm for samples grown from a less-oxygen-containing solution. © 2005 The Electrochemical Society. DOI: 10.1149/1.1990030 All rights reserved.
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