Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing

Abstract

Conversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) is found in 4H-SiC epilayers after being annealed simply at high temperatures. Grazing incidence reflection synchrotron x-ray topography for the dislocations in the epilayers before and after annealing confirmed that some of the BPDs in the epilayers had converted to TEDs from the epilayer surface by the annealing. Observations on the dislocation behavior during annealing are explained in detail, and the mechanism of BPD conversion is discussed. It is argued that the conversion proceeds through the cross slip of constricted BPD segments towards the surface on the prismatic plane driven by the image force as well as TED glide driven by the line tension. Certain kinetic processes during annealing may facilitate the formation of constriction.