Abstract
A technique for predicting wafer temperature was developed, and a model for predicting critical dimension (CD) was devised. Using this technique and model in combination makes it possible to calculate wafer temperature during gate etching within an accuracy of 1 °C and to predict CD distribution after plasma etching. Etching at a temperature for uniform CD given by the CD prediction model reduces the CD variation (3σ) during gate etching from 2.3 to 1.5 nm. Applying this temperature prediction technique and CD prediction model together will contribute to improving etching apparatus design and process development.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
