Abstract
A library of statistically random pentafluorostyrene (PFS) and methyl methacrylate (MMA) copolymers with narrow molecular weight distributions was produced, using nitroxide mediated polymerization (NMP) to study the effect of polymer composition on the performance of bottom-gate top-contact organic thin-film transistors, when utilized as the dielectric medium. Contact angle measurements confirmed the ability to tune the surface properties of copolymer thin films through variation of its PFS/MMA composition, while impedance spectroscopy determined the effect of this variation on dielectric properties. Bottom-gate, top-contact copper phthalocyanine (CuPc) based organic thin-film transistors were fabricated using the random copolymers as a dielectric layer. We found that increasing the PFS content led to increased field-effect mobility, until a point after which the CuPc no longer adhered to the polymer dielectric.
Highlights
Organic thin-film transistors (OTFTs) are expected to be an integral component of next-generation electronic devices due to their beneficial qualities such as reduced manufacturing-cost, lightweight and flexibility
As charge transport in OTFTs is limited to the sub-nanometer interfacial region between the semiconducting and dielectric layer [1,2,3], it is crucial to develop these two materials in parallel to better control their interface, and engineer higher-performing devices
We report the copolymerization of methyl methacrylate (MMA), a well-known polymer dielectric, with PFS, a unit which will tune the surface chemistry of the dielectric
Summary
Organic thin-film transistors (OTFTs) are expected to be an integral component of next-generation electronic devices due to their beneficial qualities such as reduced manufacturing-cost, lightweight and flexibility. The surface chemistry of the dielectric layer in bottom-gate configuration will dictate the growth of the semiconductor film, as well as influence the structural packing, domain structures and grain boundaries of the final film [4,5,6]. Hydrophilic surfaces, such as common inorganic oxides like SiO2 or. Hydrophobic polymers are frequently used to shield the hydroxyl functional groups on the inorganic oxide dielectric, leading to improved organic semiconductor morphology [1,8,9,10] Among hydrophobic polymers, those containing fluorinated monomers, such as 2,3,4,5, 6-pentafluorostyrene (PFS), have been used to improve the surface characteristics of dielectric layers
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
