Abstract
Van der Waals (vdW) gaps with ångström-scale heights can confine molecules or ions to an ultimately small scale, providing an alternative way to tune material properties and explore microscopic phenomena. Modulation of the height of vdW gaps between two-dimensional (2D) materials is challenging due to the vdW interaction. Here we report a general approach to control the vdW gap by preadsorption of water molecules on the material surface. By controlling the saturation vapour pressure of water vapour, we can precisely control the adsorption level of water molecules and vary the height of the vdW gaps of MoS2 homojunctions from 5.5 Å to 53.6 Å. This technique can be further applied to other homo- and heterojunctions, constructing controlled vdW gaps in 2D artificial superlattices and in 2D/3D and 3D/3D heterojunctions. Engineering the vdW gap has great practical potential to modulate the device performance, as evidenced by the vdW-gap-dependent diode characteristics of the MoS2/gap/MoS2 junction. Our work introduces a general strategy of molecular preadsorption that can extend to various precursors, creating more tunability and variability in vdW material systems.
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