Abstract
The effect of Laser Processing (LP) on defect complex formation and dissociation in ITC-GaAs was investigated by Surface Photovoltage (SPV), Photoluminescence (PL) and C-V profiling measurements. We propose that the reduction in hole concentration on LP samples is caused by a complexing of CAs and a laser-induced primary point defect. A clear correlation was found between the introduction of this complex and sample characteristics: these include, enhanced SPV signals, reduced CAs related PL intensities and a nonuniform distribution of ionized acceptors. In this exploratory work, we have demonstrated the unique influence of LP on the distribution of isolated acceptors and the free carrier concentration.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
