Abstract
An attempt was made to control the Al2O3/InAlN interface by the phase change of the Al2O3 layer formed by atomic layer deposition (ALD). The electrical properties of an InAlN metal–oxide–semiconductor (MOS) diode with a sufficiently thick ALD-Al2O3 layer deteriorated following conventional postdeposition annealing (PDA) at 850 °C, which is sufficiently high for microcrystallization of the ALD-Al2O3 layer. However, X-ray photoelectron spectroscopy showed no evidence of an interface disorder in the ultrathin ALD-Al2O3/InAlN structure annealed at 850 °C. Two-step ALD interrupted by annealing at 850 °C right after the formation of the initial ultrathin Al2O3 layer improved the electrical properties of the MOS diode with reduced interface state density (Dit) and leakage current. A weak crystallization of the ultrathin Al2O3 layer was confirmed by transmission electron microscopy. Improvement of the interface disorder by high-temperature annealing is discussed as the origin of the Dit reduction.
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