Abstract
An intentional focusing of High-Power Microwave (HPM) energy on microelectronic systems can produce effects that will potentially upset or damage the target. However, the physical mechanisms at work within the device are not often well understood. We provide a detailed understanding of the physical mechanisms involved in a common-source Metal Oxide Semiconductor (MOS) transistor inverter when Pulsed Microwave Excitation (PME) in a frequency range from 10 MHz to 1 GHz is applied on the gate terminal. Our study is based on the measurements of the current waveforms on all transistor access and explains the MOS response with and without the Radio-Frequency (RF) interference.
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