Abstract
Field-enhanced generation-recombination, due to thermally assisted deep level-to-band tunneling, has been investigated for Hg 1− x Cd x Te photodiodes. A theoretical model is used for calculating the field-enhanced capture constants of carriers and the field-enhanced g-r current. It is shown that this mechanism can give rise to a large excess current, tending to smear out the hump in the p- n junction forward I- V characteristic induced by deep level-assisted tunneling, resulting in the soft reverse breakdown, and causing the temperature dependence of g-r limited R 0 A product to deviate from the classical g-r line.
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