Abstract
The first continuous-wave InGaN multiple quantum well laser diodes grown by molecular beam epitaxy are reported. Ridge waveguide lasers are fabricated on free-standing GaN substrates and operated at room temperature under continuous-wave current injection. For 2.2×1000 µm lasers with highly reflective facet coatings a continuous-wave threshold current of 125 mA is obtained, corresponding to a threshold current density of 5.7 kA cm−2. The lasers have a threshold voltage of 8.6 V and lase at a wavelength of ∼405 nm for >3 min at 20°C.
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