Abstract
A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temperature performance in 1.3 μm wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3 μm TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W−1, based on the spectrum behavior, which is at least four times lower than the previously observed value.
Highlights
The internet traffic in data centers has been increasing substantially due to an increase in the number of internet users and the spread of telecommunication equipment such as smartphones and tablets
The transistor laser (TL) has threeterminals viz. emitter, base, and collector. Thanks to this unique configuration, the TL is capable of both current and voltage modulation. The combination of these two modulation methods can lead to multiple functions such as output control with low wavelength shift9) and signal mixing.10)
It is expected that a highspeed modulation exceeding the limit of conventional DMLs is possible for both cases.7,11,12) both voltage and current modulation at 20 Gbps and room temperature were demonstrated using TLs operating at a wavelength of 1 μm or shorter.13) For long-wavelength TLs, we have demonstrated continuous-wave (CW) operation of 1.3 μm npn AlGaInAs/
Summary
The internet traffic in data centers has been increasing substantially due to an increase in the number of internet users and the spread of telecommunication equipment such as smartphones and tablets. DMLs are superior in terms of low power consumption and small footprint Their modulation speeds are limited to around 50 Gbaud owing to the damping effect1,2) and direct modulation at 50 Gbps has been reported.3) new high-speed optical sources are necessary for replacing conventional DMLs. The transistor laser (TL) was proposed4) as a candidate to overcome the modulation speed limit of DMLs.5–7) The TL is a simple device based on a heterojunction bipolar transistor8) with an active layer in the base region. It is expected that a highspeed modulation exceeding the limit of conventional DMLs is possible for both cases.7,11,12) both voltage and current modulation at 20 Gbps and room temperature were demonstrated using TLs operating at a wavelength of 1 μm or shorter.13) For long-wavelength TLs, we have demonstrated continuous-wave (CW) operation of 1.3 μm npn AlGaInAs/.
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