Abstract
In this work we have irradiated a standard CMOS VGA imager with a 24 MeV proton beam at INFN Laboratori Nazionali del Sud, up to a nominal fluence of 10 14 protons/cm 2 . The device under test was fabricated with a 130 nm technology without radiation hardening . During the damaging the detector was fully operational to monitor the progressive damaging of the sensor and the associated on-pixel electronics in terms of detection efficiency, charge collection and noise. We found that the detector is still working at 10 13 protons/cm 2 , with a moderate increase of the noise (20%).
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