Abstract
The possibility of continuous Fermi level tuning of Nb-doped WSe2 under an external electric field is investigated, using the density functional theory combined with the effective screening medium method. The Fermi level monotonically increases and decreases as the carrier concentration increases and decreases, respectively, by controlling the external electric field. The electronic structure of Nb-doped WSe2 is insensitive to the Nb concentration and arrangement. Furthermore, it was demonstrated that the electric field simply shifts the Fermi level of Nb-doped WSe2, resulting in the constant quantum capacitance through the gate voltage, irrespective of the Nb concentration and arrangement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
