Abstract
In this study contact resistances between the Ge2Sb2Te5 thin films and TiN/W electrodes were investigated by the transmission line model method. The influence of the heat treatment on the electrical characteristics of the Ge2Sb2Te5/electrode was investigated. Heat treatment at 150 °C leads to a significant drop in contact resistance due to crystallization of the thin Ge2Sb2Te5 film. The contribution of the contact resistance to the total contact resistance of the Ge2Sb2Te5 and TiN/W contact was analyzed and showed that the contribution of the contact resistance to the total resistance sufficiently increases for the Ge2Sb2Te5 film in the crystalline state.
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