Abstract
A new method for analyzing the influence of extrinsic parameters, such as contact shape and contact area, on the contact resistance of the metal-semiconductor system is developed. The method incorporates a previously established contact theory in the Transmission Line Model used earlier for rectangular and circular contacts. Theory is also extended to the circular ring contact in this article. Good agreement with measured results substantiates the applicability of the method for the design of contact shapes and areas in semiconductor device fabrication processes. Various contact shapes and areas are investigated and the total contact resistances are compared to one another. It is shown that the contact with long thin stripes possesses the lowest contact resistance.
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