Abstract
The work is devoted to the study of contact melting in the Al-Si system, which is an aluminum film deposited on a silicon single-crystal substrate. The impulse action of high-density currents (j> 8.1010 A / m2) passing through an aluminum film is analyzed. It was found that under the considered electric heat loads in the system, the degradation processes associated with the appearance of a molten aluminum zone and subsequent contact melting in the metal-semiconductor system develop. From the analysis of contact melting processes, a technique for estimating the coefficients of multiphase diffusion in the system under consideration is a thin aluminum film-single-crystal silicon substrate.
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