Abstract
In this paper, Na0.5Bi0.5TiO3(NBT), Na0.5Bi0.5(Ti1-xFex)O3 (x = 0.02, 0.03, 0.04), and Na0.5Bi0.5Ti0.97Fe0.03O3/(Na0.5Bi0.5Ti0.99Zr0.01O3/Na0.5Bi0.5Ti0.98Zr0.02O3/Na0.5Bi0.5Ti0.97Zr0.03O3) (abbreviated as NBFT/NBZxT) heterostructures were prepared on top-to-bottom Pt/Ti/SiO2/Si substrates by the sol–gel method. All films exhibit a pure chalcogenide structure. When 3 % Fe3+ was doped into the pure NBT film, an energy storage efficiency (η) of 49.74 % was obtained. The NBFT/NBZxT heterostructure was further constructed with an energy storage efficiency of 65 %, attributed to the local nonhomogeneity induced by the Zr4+ concentration difference, which formed a relaxing ferroelectric and delayed the saturation polarization. From the experimental results, NBT-based ferroelectric thin films have great application prospects in the field of energy storage.
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