Abstract
Behavioral models for microwave devices from time domain large-signal measurements are developed. For the presented examples, the model is defined by representing the terminal currents as a function of the terminal voltages and their derivatives. When using these models as building blocks of higher level designs, the simulation speed is significantly improved. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 54–61, 2003.
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