Abstract
Tungsten silicide films (WSix) were deposited from WF6 and SiH4 by low pressure chemical vapor deposition (LPCVD) using a tubular reactor system. At the deposition temperature of 150 °C, films having low concentrations of residual fluorine (∼1.5×1021 cm−3) deposited quite conformally on micron-sized trenches. The sticking probability of the film precursor was determined from the step coverage quality, as a function of deposition temperature ranging from 120 to 390 °C. While the sticking probability remained constant above 270 °C, it changed with an activation energy of 7±2 kcal/mol in the temperature range 120–240 °C. The decreased probability of sticking improved the step coverage quality at low temperatures.
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