Abstract
Two kinds of vertical-type gated field emission diodes (GFED) and field emission microtriodes (FEMT) are modeled and their performances compared, one based on cone emitters (CE) and the other based on wedge emitters (WE). The emitters have parabolic shape. The CE and WE structure basal areas are chosen to be the same, allowing extension of the results to GFED and FEMT arrays. The planar Fowler-Nordheim (FN) current density-electric field J( E) relationship is assumed to be valid. The current I is obtained by integration of J over the emitter's surface. No “field enhancement” and “area” factors are used. The two-dimensional Laplace equation for the electric potential is solved numerically using a Gauss-Seidel iterative procedure, having as special features: appropriate coordinate systems; a unique lattice for both CE and WE modeling; lattice steps in both directions in geometrical progression; emitters described by lattice points lying on it. The GFED model parameters are: emitter curvature radius R, height h and work function φ, together with the gated anode circular aperture radius r, height H and gate voltage V g. Besides these parameters, the FEMT model includes also as parameters the anode height D and the anode voltage V a. GFED- and FEMT-obtained simulation results refer to the effect of model parameters on the emission current. FEMT modeling results also include transconductance, base resistance, gain, capacitance and cut-off frequency. Several device design suggestions are drawn.
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