Conductivity anisotropy in the doped Bi2Te3 single crystals

Abstract

Temperature dependences (temperature range T = 0.5−300 K) of resistivity in the plane of layers and in the direction perpendicular to the layers, and the galvanomagnetic effects in undoped and doped Bi2Te3 single crystals are studied (magnetic field H < 80 kOe, T = 0.5−4.2 K). It is shown that upon doping of Bi2Te3 with the Group III atoms (In and B), conductivity anisotropy increases mainly due to an increase in resistivity in the direction perpendicular to the layers. This fact makes it possible to assume that the atoms of these impurities are incorporated mainly into the van der Waal gaps between the layers upon doping. It is also revealed that, upon doping of Bi2Te3 with In and B, the temperature dependence of conductivity becomes weaker, which indicates an increase in the role of scattering by defects in scattering mechanisms. The concentrations and mobilities of charge carriers, values of the Hall factor conditioned by the anisotropy of effective masses and orientation of ellipsoids with respect to crystallographic axes, areas of the extreme section of the Fermi surface by the plane perpendicular to the direction of the magnetic field, and the Fermi energy are evaluated.