Abstract
A columnar structure of a-Si:H(Er) film serving as a working layer in electroluminescent structures has been demonstrated. The diameter of columns is in the range of 60–100 A. In a structure of this kind, the conductivity depends on the direction of current. In the planar configuration, room-temperature transport occurs through hopping via localized states near the conduction band edge, within the band tail. In the sandwich configuration, the conduction occurs along the column boundaries, where the conductivity is higher, via hopping conduction at the Fermi level.
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