Abstract
We present the fabrication of transverse graphitic microelectrodes in a 500 μm thick synthetic diamond bulk by means of pulsed Bessel beams. By suitably placing the elongated focal length of the Bessel beam across the entire sample, the graphitic wires grow from the bottom surface up to the top during multiple shot irradiation. The morphology of the microstructures generated and the micro-Raman spectra are studied as a function of the laser parameters and the diamond crystal orientation. We show the possibility to generate high conductivity microelectrodes, which are crucial for the application of electric fields or current transport/collection in various chips and detectors.
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