Abstract
A hyperbolic-sine relationship describing the current-voltage characteristics of lightly-doped, n-type polycrystalline silicon films is derived. The derivation is based on a previous model which assumes that electron-trapping states exist at the grain boundaries of the polycrystalline film. The trapped electrons cause a surface-depletion zone and a potential barrier at each grain boundary. Electrons are transported over the barriers by thermionic emission. Conduction measurements carried out on commercially prepared samples are in good agreement with the theory developed both in voltage and temperature dependence. The model parameters obtained from conduction measurements correspond reasonably well with values inferred from scanning electron micrographs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
