Abstract
Electrical conduction in 3d transition-metal oxide compounds (e.g., Sc-doped SrTiO 3) with oxygen vacancy is studied from the theoretical viewpoint. A conduction mechanism due to the motion of proton tunneling and hopping in the double minimum potential between two oxygen ions is proposed in the hole-doped perovskite structure with Ti-site substitution by Sc. Furthermore, 3d-2p electronic properties in the proton conducting Ti-oxides are discussed in comparison with those in high- T c superconducting Cu-oxides.
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