Abstract
A quantitative approach to the polycrystalline semiconductor model using an original e-beam irradiation method is proposed. The e-beam was scanned along lines parallel and perpendicular to the drain-source direction in a metal-oxide-semiconductor field-effect transistor (MOSFET) structure. Consequently, the electrostatic surface potential ψs was periodically modulated and appeared similar to that of a polycrystalline semiconductor. The threshold voltage shift, effective and field-effect mobilities were measured as a function of both the irradiation period and dose. Conductivity and Hall effect measurements were performed between 4 and 400 K and a two-mobility conduction model is proposed to interpret the dependence of the carrier concentration and Hall mobility on temperature. Potential modulation scattering and screening mechanisms were studied by varying the gate voltage. The results are compared with those obtained in polysilicon thin layers and polysilicon MOSFETs.
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