Abstract
The conductance oscillations have been observed at room temperature in the ultra thin silicon layers of the silicon-on-insulator structures prepared with the bonding and hydrogen slicing technology. An origin of the oscillations is attributed to a formation of tunnel barriers for one type of carriers due to the interface charge fluctuation in combination with the surface relief and the dopant segregation. The increase in the interface charge was observed with the thinning of the top silicon layer. This phenomenon is most likely connected with the transformation of the hydrogen incorporating complexes during the oxidation process used for the thinning of the top silicon layer.
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