Abstract
More sophisticated III–V devices and the challenge of integration require material growth over structured surfaces. Of particular interest are the Ga-In-As-P materials. Due to the surface selective growth in metalorganic molecular beam epitaxy a high degree of perfection in locally grown structures can be achieved. However, a clear picture of the growth mechanism on various crystal planes and structures helps optimizing the so-called selective area epitaxy. These mechanisms, in respect to relevant epitaxial parameters (V–III-ratio, rate, crystal orientation) for the formation of novel and low dimensional structures are discussed. In addition, the application of in situ grown lateral heterojunctions for device integration is presented.
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