Abstract
The transport properties and microstructure of amorphous GdxSi1−x alloys are presented. The conductivity increases from x=0 through the metal-insulator transition (x=14 at.%), up to a dopant concentration of 25 at.%. A sharp cusp in the magnitude of the conductivity is then observed and the flattening of the conductivity versus temperature curve occurs at higher concentrations. These transport results are explained in terms of high-resolution electron micrographs which demonstrate the formation of nano-crystallites at x≥25 at.%. The flattening of the conductivity versus the temperature curve is identical to the results for annealing of a-GdxSi1−x alloys with a low Gd concentration.
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