Computer simulation of SiC and B 4C sputtering by Ar + and He + ions bombardment

Abstract

The detailed research of the B 4C and SiC sputtering differential characteristics under Ar + and He +-ions irradiation with the energies 0.5–20 keV has been carried out using both CASNEW and like-TRIM Monte Carlo codes. The major difference between these codes is the following: the dependence of the total interaction cross-section on energy is considered by CASNEW. In its turn it influences upon the collision probability with species and the free flight path. The partial and total yields as well as the angle and energy spectra, ion and point defect depth distributions have been calculated. As it was noticed both CASNEW and TRIM codes give close results at low energies. Differences grow with energy and are more for SiC than for B 4C. In both cases the preferred sputtering of the heavier component is observed.