Abstract
In this paper, the role of nano-thin film condensation process in thin film technology is shown. It was demonstrated by using the computer simulation method that the abovementioned process determines the quality of the thin film. Proprietary models were used in order to analytically calculate the condensation process of a particle on the potential field of ideal crystal substrate and to simulate the processes of condensation and growth for atoms with isotropic or anisotropic bonds with other atoms. The numerical method is based on the algorithm of a random chosen active atom, the direction of motion of this atom is calculated by the quasi-Newton method and the step of atom movement is considerably shorter than the optimal distance of two atoms.
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