Abstract
One of the ways to improve the low open circuit voltage (V/sub oc/) seen in CuInSe/sub 2/(CIS)/CdS solar cells is to use graded bandgap (position-dependent composition) absorber material (CuInGaSeS [CIS/sup */]) in these cells. Bandgap grading introduces effective force fields in addition to the existing electrostatic field; this results in increased collection efficiencies if effective force fields are suitably oriented. This paper presents a p-i-n model for the graded bandgap CIS/sup *CdS solar cell. The model provides for multiple reflections within the intrinsic region to ensure complete absorption of incident light. This optical confinement in the intrinsic region results in 25-40% increase in photons absorbed depending on the grading profile. Numerical simulations carried out to obtain the I-V curve show that suitable bandgap grading (linear and notch type) of the absorber material in the intrinsic region (p-i-n model) of CIS/sup */ solar cells can cause substantial improvement in the V/sub oc/, fill factor and efficiency. >
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