Abstract
A two-dimensional numerical analysis is made for MOSFETs having short channel lengths. The short channel MOSFET is especially characterized by the existence of the punch-through current which cannot be explained by the one-dimensional MOSFET models. The two-dimensional analysis makes clear the following facts relating about the punch-through mechanism. The punch-through is a condition in which the depletion layers of the source and the drain connect mutually at the deep region in the substrate even in equilibrium. The punch-through current is injected through the saddle point of the intrinsic potential into the drain region by the electric field from the drain, at the low gate voltages.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
