Abstract
A compressively stressed polycrystalline-silicon (poly-Si) thin-film transistor (TFT) was successfully demonstrated on a tensile stressed glass substrate. The layer of a-Si:H/bare glass was annealed for 45 h with a sharp annealing and a slow cooled condition in order to form compressive strain on the a-Si:H film. Then, the a-Si:H was crystallized by NiSi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> seed-induced lateral crystallization having (110) preferred texture, and the top-gated TFT was fabricated. The electrical properties were excellent comparing with the strain-free poly-Si TFT, and especially the field-effect mobility increased 9.3 times higher.
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