Abstract
The strain distribution in compositionally graded AlGaN planar structures, pillars, and nanowires (NWs) has been studied by 3D strain calculations based on numerical finite element method (FEM) and X-ray diffraction reciprocal space mapping. First, new fitting analyses of the reciprocal space maps (RSMs) are demonstrated to evaluate the depth profiles of strain and Al concentration, the film thickness, and the density of threading dislocation in compositionally graded AlGaN planar heterostructures. A good correlation between calculated and experimental RSMs for graded AlGaN thin film grown epitaxially on a GaN(0001) substrate was obtained. Second, by performing a FEM simulation of 3D strain distribution, we determined the influence of surface-to-volume ratio of compositionally graded AlGaN nanostructures of different diameters and on different substrates on the effectiveness of strain relaxation. The results show a faster strain decay with increasing surface-to-volume ratio from NWs to pillars. The AlGaN ...
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