Abstract
The compositional homogeneity of MOVPE-grown In x Ga 1− x As layers over an area of 5.5 × 10 cm 2 in investigated. The various conditions under which these layers were grown are atmospheric pressure and low pressure as well as cold and hot reactor walls. At atmospheric pressure a cold reactor wall initiates a convective vortex, a hot reactor wall yields parasitic depositions on the reactor wall. At low pressure the layer composition is found to be nearly independent of the wall temperature. Layers with a high compositional homogeneity of about 1% over an area of two 2 inch wafers can be grown at a total pressure of 100 mbar.
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