Abstract
In order to form a composite of SiC and Si 3N 4 on a SiC surface polycrystalline SiC was irradiated with a 50-keV nitrogen ion beam with or without a hydrogen radical beam at elevated temperature up to 1100°C. The depth profiles, the chemical state of elements and the structure of the implanted surface were measured using RBS, NRA, AES, XPS and G-XRD. It was found that graphite-like carbon produced by the nitrogen implantation at 1100°C segregated at the surface and carbon depletion layer are formed beneath the surface. With increasing nitrogen fluence the replacement of carbon by nitrogen took place and β-Si 3N 4 crystallites were formed on the SiC surface. Preferential loss of carbon atoms in the implanted layer was promoted by irradiation with a hydrogen radical beam during the nitrogen implantation, and the amount of β-Si 3N 4 crystallites gradually increased.
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