Abstract
AbstractThe composition dependence of room temperature 1.54 μ Er3+ photoluminescence of erbium doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium is investigated. The Si:O ratio was varied from 3:1 to 1:2 and the annealing temperature was varied from 500 to 900 °C. The most intense Er3+ luminescence is observed from the sample with Si:O ratio of 1:1.2 after 900 °C anneal and formation of silicon nanoclusters embedded in SiO2 matrix. High active erbium fraction, efficient excitation via carriers, and high luminescence efficiency due to high quality SiO2 matrix are identified as key factors in producing the intense Er3+ luminescence.
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