Abstract
The behaviour of the subband structure of AlGaAs/GaAs single quantum well structures due to interdiffusion shows that the variations of the allowed interband transitions with interdiffusion are determined by confinement and compositional energy changes in the quantum well. The understanding of these is interrelated, and they are strong functions of the as-grown well width. In particular, our results demonstrate that the higher-order transitions are more sensitive to interdiffusion than the ground state transitions during the early stages of interdiffusion.
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