Composite metal etching for submicron integrated circuits

Abstract

To define metal lines for composite metal structures for integrated circuits with small pitches (<2 /spl mu/m), the etch selectivity and dimensional control must be improved from existing values of /spl sim/1.5:1 and >0.1 /spl mu/m/line, respectively, without leaving metallic residue and without undercutting the masking layer. These goals have been achieved for a layered metal structure of Ti-W/Al-Cu(2%)/Ti-W with an Applied Materials AME 8330 batch system after examining process parameter spaces defined by the following: (i) reactor pressure, (ii) dc bias voltage, and (iii) gas composition for these two films. The selectivity between Al-Cu(2%) and photoresist increases with decreasing dc bias voltage and increasing Cl/sub 2/ content of Cl/sub 2//BCl/sub 3//CHF/sub 3/ gas mixtures. In comparison, the selectivity between Ti-W and photoresist increases only with increasing CF/sub 4/ content of CF/sub 4//Cl/sub 2/ gas mixtures; changes in the other variables examined in this work with Ti-W have no significant effect on selectivity.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>