Abstract
Graphene grown by chemical vapor deposition on copper and the one transferred to Si/SiO2 substrate were subjected to Ar ion treatment. A combination of X-ray photoelectron spectroscopy and Raman spectroscopy were used for characterization. According to XPS data sample on Si/SiO2 appears less susceptible to sputtering under bombardment. However, the defect concentrations introduced to the transferred graphene reach up the value two orders of magnitude higher than that in as grown graphene on Cu. We attribute this difference to the influence of the non-compensated charge formed on the insulating SiO2 layer under bombardment.
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