Abstract
This article describes an integrated approach to the study of multilayer nanostructures of a-Si/SiO1.9 as a potential model to study the influence of the effects arising at the interface of Si/SiO2 under the influence of ionizing radiation. The results of the functional layers of amorphous silicon and silicon dioxide surface topology investigation have been disclosed. The possibility of application of a band gap contrast in electron probe studies by means of electron energy filtering during the detection process has been demonstrated. Changes in valence band and band gap through depth of the a-Si/SiO1.9 nanostructure have been registered. As part of the study, density of states of the a-Si/SiO1.9 multilayer nanostructures and depth distribution of surface suboxide layers of native oxide of amorphous silicon have been reconstructed using the determination of an effective mean free path of the electrons by the TPP2M algorithm in conjunction with PARXPS and REELS measurements. Copyright © 2015 John Wiley & Sons, Ltd.
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