Abstract
We report the reproducible complementary switching based on the exceptional TiN/MgZnO/ZnO/Pt bipolar resistive memory devices. The uniform complementary switching with good endurance was observed after the second electroforming process. The resultant complementary switching of TiN/MgZnO/ZnO/Pt devices were interpreted in view of rupture and recovery of conductive filaments inside MgZnO layer and ZnO layer resulted from the redistribution of oxygen vacancies. The TiN/MgZnO/ZnO/Pt devices with complementary switching characteristics ensure the capability to suppress the sneak current paths of cross-point memories, and have great potential applications for future 3D crossbar memory architecture.
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